ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,853, issued on Nov. 3, was assigned to Everdisplay Optronics (Shanghai) Co. Ltd. (Shanghai). "Shift register unit, gate driving circuit and ... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,854, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device for counting sequence of operati... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,855, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Testing method and memory module under test" was i... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,856, issued on Nov. 3, was assigned to Altera Corp. (San Jose, Calif.). "Built-in-self-test circuits and methods in sectors of integrated ci... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,857, issued on Nov. 3, was assigned to CXMT Corp. (Hefei City, China). "Memory" was invented by Weibing Shang (Hefei City, China), Xiangyun ... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,858, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TSING HUA UNIVERSITY (H... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,859, issued on Nov. 3. "Dynamic row address mapping for mitigating row hammer effect in DRAM" was invented by James Maxted (Cedar Rapids, Io... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,860, issued on Nov. 3. "One-time programmable memory device and semiconductor memory device including the same" was invented by Yeongmuk Cho... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,861, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor apparatus having test function and semiconduct... और पढ़ें
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,862, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory device including reference resistance" ... और पढ़ें